少子寿命，PN结的好坏，表面及体内的复合情况,材料质量、钝化效果等" b3 X _6 K$ b1 u" ~- I. E1 V; A Life time,Pseudo-EFF, Pseudo-Voc, Pseudo-FF, Ideality factor
对比该曲线与最后测定的I至V曲线，可以准确测量出电池的串联电阻。
Suns-Voc系统特征
晶元测定的温控为25°C
电压探针的高精准度
兼容磁性探针
配备全套浓度补正滤色片的疝气灯
后支柱可调节高度，准确调节亮度
适用标准I至V曲线图及Suns-Voc曲线图
不受串联电阻的影响，测定晶片特征
Suns-Voc Applications
By either probing the silicon p+ and n+ regions directly or probing the metallization layer (if present), the illumination-Voc curve can be measured. This curve can be displayed as ourwell-known Suns-Voc plot or in the form of a standard photovoltaic curve which can be used to characterize shunting. The entire curve is measured at the open-circuit voltage, so it is free from the effects of series resistance. Comparing this curve to the final I-V curve gives a precise measure of the series resistance in the cel
